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LT5503EFE-PBF - 1.2GHz to 2.7GHz Direct IQ Modulator and Mixer

LT5503EFE-PBF_4427212.PDF Datasheet


 Full text search : 1.2GHz to 2.7GHz Direct IQ Modulator and Mixer


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LT5503EFEPBF 1.2GHz to 2.7GHz Direct IQ Modulator and Mixer; Package: TSSOP; No of Pins: 20; Temperature Range: -40°C to 125°C 1200 MHz - 2700 MHz RF/MICROWAVE I/Q MODULATOR
Linear Technology, Corp.
RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
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LTC4401-2 LTC4401-1 Dual RF Power Controller with 450kHz Loop BW (800MHz to 2GHz)
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Linear
SY87724L SY87724LH1 3.3V AnyRateTM MUX/DEMUX Up to 2.7GHz
From old datasheet system
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
LT5522EUF LT5522EUFTR 600MHz to 2.7GHz High Signal Level Downconverting Mixer; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 125°C TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC16
400MHz to 2.7GHz High Signal Level Downconverting Mixer
Linear Technology, Corp.
LTC5508 LTC5508ESC6 LTC5508ESC6TRM LTC5508ESC6TRMP 300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; No of Pins: 6; Temperature Range: -40°C to 125°C 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX
300MHz to 7GHz RF Power Detector in SC70
Linear Technology, Corp.
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
TPD03-0.5G02S 0.5-2GHz 3-Way Power Divider
Transcom, Inc.
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Transcom, Inc.
 
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